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FDM606P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel 1.8V Logic Level Power Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDM606P
समारोह P-Channel 1.8V Logic Level Power Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDM606P?> डेटा पत्रक पीडीएफ

FDM606P pdf
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
VDS = -16V
VGS = 0V
TA=100oC
VGS = ±8V
On Characteristics
VGS(TH) Gate to Source Threshold Voltage
rDS(ON) Drain to Source On Resistance
VGS = VDS, ID = -250µA
ID = -6.8A, VGS = -4.5V
ID = -3.8A, VGS = -2.5V
ID = -3.0A, VGS = -1.8V
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(-2.5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at -4.5V
Total Gate Charge at -2.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = -10V, VGS = 0V,
f = 1MHz
VGS = 0V to -4.5V
VGS = 0V to -2.5V
VDD = -10V
ID = -3.0A
Ig = 1.0mA
Switching Characteristics (VGS = -4.5V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = -10V, ID = -3.0A
VGS = -4.5V, RGS = 6.8
Min
-20
-
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
- -V
- -1
µA
- -5
- ±100 nA
-0.9
0.026
0.033
0.052
-1.5
0.030
0.038
0.070
V
2200
350
160
20
12
3.0
3.8
-
-
-
30
18
-
-
pF
pF
pF
nC
nC
nC
nC
- 81
9-
46 -
134 -
71 -
- 308
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD = -6.8A
ISD = -3.0A, dISD/dt = 100A/µs
ISD = -3.0A, dISD/dt = 100A/µs
- -0.9 -1.2 V
- - 28 ns
- - 20 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. RθJC is guaranteed by design while RθCA is determined by user’s board design.
2. RθJA is 65 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
©2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,

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डाउनलोड[ FDM606P Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDM606PP-Channel 1.8V Logic Level Power Trench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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