DataSheet.in

FDM6296 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel / Logic-Level / PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDM6296
समारोह Single N-Channel / Logic-Level / PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDM6296?> डेटा पत्रक पीडीएफ

FDM6296 pdf
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain–Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
TJ Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 11.5 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 11.5A, TJ = 125°C
VDS = 5 V, ID =11.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 15 V, ID = 11.5 A,
VGS = 5 V
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward VGS = 0 V, IS = 2 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 11.5 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
Min
30
1
Typ
29
1.9
–5
8.7
10.6
13
47
1507
415
128
1.1
10
5
27
13
12
4
3
0.9
29
20
Max Units
V
mV/°C
1
±100
µA
nA
3V
mV/°C
10.5 m
15
17
S
pF
pF
pF
20 ns
10 ns
44 ns
23 ns
17 nC
nC
nC
2A
1.2 V
nS
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in_ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.
RθJC are guaranteed by design while RθJA is determined by the user’s board design.
(a). RθJA = 52°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDM6296 Rev. D
2 www.fairchildsemi.com

विन्यास 6 पेज
डाउनलोड[ FDM6296 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDM6296Single N-Channel / Logic-Level / PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English