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KM416S1021C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 512K x 16-Bit x 2-Bank SDRAM - Samsung Semiconductor

भाग संख्या KM416S1021C
समारोह 512K x 16-Bit x 2-Bank SDRAM
मैन्युफैक्चरर्स Samsung Semiconductor 
लोगो Samsung Semiconductor लोगो 
पूर्व दर्शन
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<?=KM416S1021C?> डेटा पत्रक पीडीएफ

KM416S1021C pdf
KM416S1021C
PIN CONFIGURATION (Top view)
Preliminary
CMOS SDRAM
VDD
DQ0
DQ1
VSSQ
DQ2
DQ3
VDDQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
PIN FUNCTION DESCRIPTION
50 VSS
49 DQ15
48 DQ14
47 VSSQ
46 DQ13
45 DQ12
44 VDDQ
43 DQ11
42 DQ10
41 VSSQ
40 DQ9
39 DQ8
38 VDDQ
37 VREF
36 UDQM
35 CLK
34 CKE
33 N.C
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 VSS
50Pin TSOP (II)
(400mil x 825mil)
(0.8 mm Pin pitch)
Pin
CLK
CS
Name
System clock
Chip select
CKE
Clock enable
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A10/AP Address
BA Bank select address
RAS
Row address strobe
CAS
Column address strobe
WE Write enable
L(U)DQM Data input/output mask
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
Data input/output
Power supply/ground
Data output power/ground
VREF
Reference voltage
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10, Column address : CA0 ~ CA7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
Reference voltage for inputs.
REV. 1. May '98

विन्यास 8 पेज
डाउनलोड[ KM416S1021C Datasheet.PDF ]


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KM416S1021C512K x 16-Bit x 2-Bank SDRAMSamsung Semiconductor
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