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STB70NF03L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - ST Microelectronics

भाग संख्या STB70NF03L
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STB70NF03L?> डेटा पत्रक पीडीएफ

STB70NF03L pdf
STP70NF03L/STB70NF03L-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
1.5
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
35
450
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 35 A
VGS = 5 V, ID = 18 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
70
Typ.
2
0.008
0.015
Max.
0.01
0.018
Unit
V
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 35 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
40
1470
490
110
Max.
Unit
S
pF
pF
pF
2/9

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डाउनलोड[ STB70NF03L Datasheet.PDF ]


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