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STD12N05L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - ST Microelectronics

भाग संख्या STD12N05L
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD12N05L?> डेटा पत्रक पीडीएफ

STD12N05L pdf
STD12N05L/STD12N06L
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3.33
100
1.5
275
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
12
30
7
8
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA
VG S = 0
for STD12N05L
for STD12N06L
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 15 V
Min.
50
60
Typ. Max. Unit
1
10
± 100
V
V
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V ID = 6 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
1
Typ.
1.6
0. 115
Max.
2.5
0. 15
Unit
V
12 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 6 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
4
Typ.
8
Max.
Unit
S
350 500
150 200
50 80
pF
pF
pF
2/10

विन्यास 10 पेज
डाउनलोड[ STD12N05L Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

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