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STD12N10L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - ST Microelectronics

भाग संख्या STD12N10L
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD12N10L?> डेटा पत्रक पीडीएफ

STD12N10L pdf
STD12N10L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 3 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 100 oC/W
Rthc-sink Thermal Resistance Case-sink
T yp 1.5 oC/W
T l Maximum Lead Temperature F or Soldering Purpose
275 oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 6 A
Resistance
VGS = 5V ID = 6 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
12
Typ.
1.6
0.12
0.17
Max.
2.5
0.15
0.2
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 6 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
6.5
Typ.
10
Max.
Unit
S
800 pF
150 pF
50 pF
2/9

विन्यास 6 पेज
डाउनलोड[ STD12N10L Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
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