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STD100NH03L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - ST Microelectronics

भाग संख्या STD100NH03L
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STD100NH03L?> डेटा पत्रक पीडीएफ

STD100NH03L pdf
STD100NH03L
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb(#)
Maximum Lead Temperature For Soldering Purpose
(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
Max
Max
Max
1.5
100
43
275
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 30 A
ID = 30 A
Min.
1
Typ. Max.
1.8 2.5
0.005 0.0055
0.0060 0.0105
Unit
V
DYNAMIC
Symbol
gfs (5)
Ciss
Coss
Crss
RG
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Test Conditions
VDS = 10 V
ID = 30 A
VDS = 15V f = 1 MHz VGS = 0
Min.
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Typ.
40
4100
680
70
1.3
Max.
Unit
S
pF
pF
pF
2/11

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डाउनलोड[ STD100NH03L Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STD100NH03LN-CHANNEL POWER MOSFETST Microelectronics
ST Microelectronics


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