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STD10NF10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - ST Microelectronics

भाग संख्या STD10NF10
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD10NF10?> डेटा पत्रक पीडीएफ

STD10NF10 pdf
STD10NF10
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
3.0
100
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 100°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 5 A
Min.
2
Typ.
3
0.115
Max.
4
0.13
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
460
70
30
Max.
Unit
S
pF
pF
pF
2/10

विन्यास 10 पेज
डाउनलोड[ STD10NF10 Datasheet.PDF ]


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