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STD16NE06L-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - ST Microelectronics

भाग संख्या STD16NE06L-1
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STD16NE06L-1?> डेटा पत्रक पीडीएफ

STD16NE06L-1 pdf
ST16NE06L1
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.75
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 35 V)
Max Value
16
60
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS ID = 250 µA
VGS = 10V ID = 8 A
VGS = 5V ID = 8 A
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.07 0.085
0.06 0.07
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
16
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =8 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
5
Typ.
9
Max.
Unit
S
800 1100
125 170
50 70
pF
pF
pF
2/5

विन्यास 5 पेज
डाउनलोड[ STD16NE06L-1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STD16NE06L-1N-CHANNEL POWER MOSFETST Microelectronics
ST Microelectronics


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