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FZ1200R12KF4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Power Module - Eupec

भाग संख्या FZ1200R12KF4
समारोह IGBT Power Module
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<?=FZ1200R12KF4?> डेटा पत्रक पीडीएफ

FZ1200R12KF4 pdf
FZ 1200 R 12 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
gate threshold voltage
input capacity
collector-emitter cut-off current
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
gate leakage current
gate leakage current
turn-on time (inductive load)
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
Abschaltverlustleistung pro Puls
turn-on energy loss per puls
turn-off energy loss per puls
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
tp=1 ms
tC=25°C, Transistor /transistor
tp=1ms
RMS, f=50 Hz, t= 1 min.
iC=1,2kA, vGE=15V, tvj=25°C
iC=1,2kA, vGE=15V, tvj=125°C
iC=48mA, vCE=vGE, tvj=25°C
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V
vCE=1200V, vGE=0V, t vj=25°C
vCE=1200V, vGE=0V, t vj=125°C
vCE=0V, vGE=20V, tvj=25°C
vCE=0V, vEG=20V, tvj=25°C
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA,vCE=600V
vL = ±15V, RG = 0,82 , tvj=25°
vL = ±15V, RG = 0,82 , tvj=125°
iC=1,2kA, vCE=600V, L s=70nH
vL=±15V,RG=0,82 ,Tvj=125°C
iC=1,2kA, vCE=600V, L s=70nH
vL=±15V,RG=0,82 ,Tvj=125°C
VCES
IC
ICRM
Ptot
VGE
IF
IFRM
VISOL
vCE sat
vGE(th)
Cies
iCES
iGES
iEGS
ton
ts
tf
min.
-
-
4,5
-
-
-
-
-
typ.
2,7
3,3
5,5
90
16
100
-
-
0,7
- 0,8
- 0,9
- 1,0
- 0,10
- 0,15
Eon - 170
Eoff -
190
1200 V
1200 A
2400 A
7800 W
± 20 V
1200 A
2400 A
2,5 kV
max.
3,2 V
3,9 V
6,5 V
- nF
- mA
200 mA
400 nA
400 nA
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
iF=1,2kA, vGE=0V, tvj=25°C
iF=1,2kA, vGE=0V, tvj=125°C
iF=1,2kA, vRM=600V, vEG = 10V
-diF/dt = 6 kA/µs, tvj = 25°C
tvj = 125°C
iF=1,2kA, vRM=600V, vEG = 10V
-diF/dt = 6 kA/µs, tvj = 25°C
tvj = 125°C
Transistor / transistor, DC
Transistor,DC,pro Zweig/per arm
pro Modul / per Module
pro Modul / per Module
Transistor / transistor
vF
IRM
Qr
RthJC
RthCK
tvj max
tc op
tstg
terminals M6 / tolerance +/-15%
terminals M4 / tolerance +/-15%
terminals M8
M1
M2
G
- 2,2
- 2,0
- 400
- 700
- 50
- 150
2,7 V
2,5 V
-A
-A
- µAs
- µAs
0,016 °C/W
0,032 °C/W
0,008 °C/W
150 °C
-40...+125 °C
-40...+125 °C
AI2O3
5 Nm
2 Nm
8...10 Nm
ca. 1500 g
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
tfg = 10 µs
vL = ±15 V
RGF = RGR = 0,82
tvj = 125°C
VCC = 750 V
vCEM = 900 V
iCMK1 10000 A
iCMK2 8000 A
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v CEM= VCES - 15nH x |dic/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.

विन्यास 5 पेज
डाउनलोड[ FZ1200R12KF4 Datasheet.PDF ]


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