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2B940A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP epitaxial planar type(For power amplification) - Panasonic

भाग संख्या 2B940A
समारोह Silicon PNP epitaxial planar type(For power amplification)
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
1 Page
		
<?=2B940A?> डेटा पत्रक पीडीएफ

2B940A pdf
Power Transistors
PC — Ta
50
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
40 (3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
(1)
20
10 (2)
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–600
–500
–400
–300
–200
IC — VCE
TC=25˚C
IB=–4.5mA
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–100
–1.0mA
– 0.5mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB940, 2SB940A
IC — VBE
–2.0
VCE=–10V
–1.6
–1.2
25˚C
TC=100˚C
– 0.8
– 0.4
–25˚C
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
10000
3000
hFE — IC
VCE=–10V
1000
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10
–3 ICP
IC
–1
5ms
– 0.3
– 0.1
t=0.5ms
1ms
DC
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2

विन्यास 2 पेज
डाउनलोड[ 2B940A Datasheet.PDF ]


शेयर लिंक


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