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NZT45H8 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Power Amplifier - Fairchild Semiconductor

भाग संख्या NZT45H8
समारोह PNP Power Amplifier
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NZT45H8?> डेटा पत्रक पीडीएफ

NZT45H8 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
PNP Power Amplifier
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 mA, IB = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
IC = 2.0 A, VCE = 1.0 V
IC = 4.0 A, VCE = 1.0 V
IC = 8.0 A, IB = 0.4 A
IC = 8.0 A, IB = 0.8 A
IC = 10 mA, VCE = 2.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
IC = 500 mA, VCE = 10 V,
60 V
10 µA
100 µA
60
40
1.0
1.5
0.54 0.65
V
V
V
40 MHz
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
180
125 °C
160
Vce = 5V
140
120 25 °C
100
80
60 - 40 °C
40
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
IC - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1
β = 10
0.8
0.6
125 ºC
0.4 25 °C
0.2
0
0.1
- 40 ºC
1
I C - COLLECTOR CURRENT (A)
PQ
10 15

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डाउनलोड[ NZT45H8 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NZT45H8PNP Power AmplifierFairchild Semiconductor
Fairchild Semiconductor


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