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NTE163A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Transistor Horizontal Deflection - NTE

भाग संख्या NTE163A
समारोह Silicon NPN Transistor Horizontal Deflection
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE163A?> डेटा पत्रक पीडीएफ

NTE163A pdf
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
EmitterBase Voltage
ON Characteristics (Note 2)
VCEO(sus) IC = 100mA, IB = 0
ICES VCE = 1500V, VBE = 0
VEBO IE = 10mA, IC = 0
700 – – V
– – 1.0 mA
5––V
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 4.5A, VCE = 5V
IC = 4.5A, IB = 2A
IC = 4.5A, IB = 2A
2.25 – –
––5V
– – 1.5 V
Current GainBandwidth Product
Output Capacitance
Switching Characteristics
fT IC = 100mA, VCE = 5V, f = 1MHz 4 MHz
Cob VCB = 10V, IE = 0, f = 1MHz
125 pF
Fall Time
tf IC = 4.5A, IB = 1.8A, LB = 10µH 0.6 µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

विन्यास 2 पेज
डाउनलोड[ NTE163A Datasheet.PDF ]


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