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MJE800 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Epitaxial Silicon Darlington Transistor - Fairchild

भाग संख्या MJE800
समारोह NPN Epitaxial Silicon Darlington Transistor
मैन्युफैक्चरर्स Fairchild 
लोगो Fairchild लोगो 
पूर्व दर्शन
1 Page
		
<?=MJE800?> डेटा पत्रक पीडीएफ

MJE800 pdf
Typical Characteristics
5
4 IB= 450µA
IB= 400µA
IB= 350µA
3
2
1
IB= 500µA
IB= 300µA
IB= 250µA
IB= 200µA
IB= 150µA
IB= 100µA
IB= 50µA
0
012345
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
IC = 500 IB
10
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
MJE800/801
MJE802/803
0.1
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10000
1000
VCE = 3V
100
10
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1000
100
f=0.1MHZ
IE=0
10
1
0.01
0.1
1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, February 2001

विन्यास 4 पेज
डाउनलोड[ MJE800 Datasheet.PDF ]


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