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MCM6729D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 256K x 4 Bit Fast Static Random Access Memory - Motorola

भाग संख्या MCM6729D
समारोह 256K x 4 Bit Fast Static Random Access Memory
मैन्युफैक्चरर्स Motorola 
लोगो Motorola लोगो 
पूर्व दर्शन
1 Page
		
<?=MCM6729D?> डेटा पत्रक पीडीएफ

MCM6729D pdf
TRUTH TABLE (X = Don’t Care)
E GW
Mode
H X X Not Selected
L H H Output Disabled
L LH
Read
LXL
Write
VCC Current
ISB1, ISB2
ICCA
ICCA
ICCA
Output
High–Z
High–Z
Dout
High–Z
Cycle
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin Except
VCC
Vin, Vout – 0.5 to VCC + 0.5
V
Output Current
Iout ±30 mA
Power Dissipation
PD 1.2 W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the in-
puts against damage due to high static voltages
or electric fields; however, it is advised that nor-
mal precautions be taken to avoid application of
any voltage higher than maximum rated volt-
ages to these high–impedance circuits.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Supply Voltage (Operating Voltage Range)
Input High Voltage
VCC
VIH
4.5
2.2
Input Low Voltage
VIL – 0.5*
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width 2.0 ns) for I 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width 2.0 ns) for I 20.0 mA.
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Ilkg(I)
Ilkg(O)
VOL
VOH
Typ Max Unit
5.0 5.5 V
— VCC + 0.3** V
— 0.8 V
Min Max Unit
± 1.0
µA
± 1.0
µA
— 0.4 V
2.4 — V
POWER SUPPLY CURRENTS
Parameter
Symbol 6729D–8 6729D–10 6729D–12 Unit
AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax)
ICCA
195
165
155 mA
Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz)
ICC2
90
90
90 mA
AC Standby Current (E = VIH, VCC = max, f = fmax)
ISB1
60
60
60 mA
CMOS Standby Current (VCC = max, f = 0 MHz, E VCC – 0.2 V,
ISB2
20
20
20 mA
Vin VSS + 0.2 V, or VCC – 0.2 V)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
Notes
1, 2, 3
1, 2, 3
MCM6729D
2
MOTOROLA FAST SRAM

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