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TODV640 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - ALTERNISTORS - STMicroelectronics

भाग संख्या TODV640
समारोह ALTERNISTORS
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=TODV640?> डेटा पत्रक पीडीएफ

TODV640 pdf
TODV 640 ---> 1240
THERMAL RESISTANCES
Symbol
Parameter
Rth (c-h) Contact (case-heatsink) with grease
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
0.1
1.2
0.9
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 60A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
MAX
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MIN
(dI/dt)c *
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
Value
200
1.5
0.2
2.5
100
200
50
1.8
0.02
8
500
35
142
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
2/5

विन्यास 5 पेज
डाउनलोड[ TODV640 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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TODV640ALTERNISTORSSTMicroelectronics
STMicroelectronics
TODV640ALTERNISTORSSTMicroelectronics
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