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TV3010K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Rectifier Diode - Dynex Semiconductor

भाग संख्या TV3010K
समारोह Rectifier Diode
मैन्युफैक्चरर्स Dynex Semiconductor 
लोगो Dynex Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=TV3010K?> डेटा पत्रक पीडीएफ

TV3010K pdf
TV30
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) forward current
FSM
I2t I2t for fusing
I Surge (non-repetitive) forward current
FSM
I2t I2t for fusing
Conditions
10ms half sine; T = 175oC
case
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase =175oC
VR = 0
Max. Units
4.8 kA
115 x 106 A2s
6.0
180 x 103
kA
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
Tstg Storage temperature range
- Mounting Torque
Conditions
dc
Mounting torque 35.0Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
Min. Max. Units
- 0.13 oC/W
- 0.06 oC/W
- 175
- 175
-55 200
30.0 35.0
oC
oC
oC
Nm
CHARACTERISTICS
Symbol
Parameter
V Forward voltage
FM
IRRM Peak reverse current
QS Total stored charge
IRM Peak recovery current
trr reverse recovery time
V Threshold voltage
TO
r Slope resistance
T
*Typical values.
Conditions
At 1000A peak, T = 25oC
case
At VRRM, Tcase = 175oC
I
F
=
200A,
dI /dt
RR
=
20A/µs,
T
case
=
25˚C
At T = 175˚C
vj
At T = 175˚C
vj
Typ. Max. Units
- 1.4 V
-
300*
20
-
mA
µC
90* -
A
6.5* -
µs
- 0.8 V
- 0.6 m
2/7

विन्यास 7 पेज
डाउनलोड[ TV3010K Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TV3010KRectifier DiodeDynex Semiconductor
Dynex Semiconductor
TV3010MRectifier DiodeDynex Semiconductor
Dynex Semiconductor


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