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IRF5801 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A) - International Rectifier

भाग संख्या IRF5801
समारोह Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5801?> डेटा पत्रक पीडीएफ

IRF5801 pdf
IRF5801
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
2.2
5.5
25
250
100
-100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ƒ
VGS = 10V, ID = 0.36A ƒ
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
0.44 ––– –––
Qg Total Gate Charge
––– 3.9 –––
Qgs Gate-to-Source Charge
––– 0.8 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 2.2 –––
td(on)
Turn-On Delay Time
––– 6.5 –––
tr Rise Time
––– 8.0 –––
td(off)
Turn-Off Delay Time
––– 8.8 –––
tf Fall Time
––– 19 –––
Ciss Input Capacitance
––– 88 –––
Coss Output Capacitance
––– 18 –––
Crss Reverse Transfer Capacitance
––– 6.3 –––
Coss Output Capacitance
––– 102 –––
Coss Output Capacitance
––– 8.4 –––
Coss eff. Effective Output Capacitance
––– 26 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 0.36A
ID = 0.36A
VDS = 160V
VGS = 10V
VDD = 100V
ID = 0.36A
RG = 53
VGS = 10V
VGS = 0V
ƒ
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
9.9
0.6
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
––– ––– 1.8
––– ––– 4.8
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 45 –––
––– 54 –––
V TJ = 25°C, IS = 0.36A, VGS = 0V ƒ
ns TJ = 25°C, IF = 0.36A
nC di/dt = 100A/µs ƒ
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