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IRF540FI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET - STMicroelectronics

भाग संख्या IRF540FI
समारोह N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=IRF540FI?> डेटा पत्रक पीडीएफ

IRF540FI pdf
IRF540/IRF540FI
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1
T O220-F I
3.33
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 25 V)
Max Valu e
30
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 15 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.05 0.077
30 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 15 A
Min.
10
Typ. Max.
20
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2600
350
85
3600
500
120
pF
pF
pF
2/6

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डाउनलोड[ IRF540FI Datasheet.PDF ]


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