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IRF530N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel TrenchMOS transistor - NXP

भाग संख्या IRF530N
समारोह N-channel TrenchMOS transistor
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF530N?> डेटा पत्रक पीडीएफ

IRF530N pdf
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF530N
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT78 package, in free air
MIN. TYP. MAX. UNIT
- - 1.9 K/W
- 60 - K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VGS = 10 V; ID = 9 A
Tj = 175˚C
VDS = 25 V; ID = 9 A
VGS = ± 20 V; VDS = 0 V
VDS = 100 V; VGS = 0 V
VDS = 80 V; VGS = 0 V; Tj = 175˚C
ID = 9 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 2.7 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-V
89 -
-V
234V
1- -V
- 6V
- 80 110 m
- - 275 m
6.4 11 - S
- 10 100 nA
- 0.05 10 µA
- - 250 µA
- - 40 nC
- - 5.6 nC
- - 19 nC
- 6 - ns
- 36 - ns
- 18 - ns
- 12 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 633 -
- 103 -
- 61 -
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 17 A; VGS = 0 V
trr
Reverse recovery time
IF = 17 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
- - 17 A
- - 68 A
- 0.92 1.2 V
- 55 - ns
- 135 - nC
August 1999
2
Rev 1.100

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डाउनलोड[ IRF530N Datasheet.PDF ]


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