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IRF530L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) - International Rectifier

भाग संख्या IRF530L
समारोह Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF530L?> डेटा पत्रक पीडीएफ

IRF530L pdf
IRF530NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.11 VGS = 10V, ID = 9.0A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
6.4 ––– ––– S VDS = 50V, ID = 9.0A…
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 44
ID = 9.0A
––– ––– 6.2 nC VDS = 80V
––– ––– 21
VGS = 10V, See Fig. 6 and 13 „…
––– 6.4 –––
VDD = 50V
–––
–––
27 –––
37 ––– ns
ID = 9.0A
RG = 12
––– 25 –––
RD = 5.5, See Fig. 10 „…
Between lead,
––– 7.5 ––– nH and center of die contact
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 640 –––
VGS = 0V
––– 160 ––– pF VDS = 25V
––– 88 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 17
––– ––– 60
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V „
––– 130 190 ns TJ = 25°C, IF = 9.0A
––– 650 970 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 3.1mH
RG = 25W, IAS = 9.0A. (See Figure 12)
ƒ ISD 9.0A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 175°C
… Uses IRF530N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
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