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IRF530FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR - STMicroelectronics

भाग संख्या IRF530FP
समारोह N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=IRF530FP?> डेटा पत्रक पीडीएफ

IRF530FP pdf
IRF530FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
4.28
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
16
85
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating Tc = 125 oC
Gate-body Leakage VGS = ± 20 V
Current (VDS = 0)
Min.
600
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate
Voltage
Threshold VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 8 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
Max.
4
Unit
V
0.12 0.16
10 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
ReverseTransfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 8 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
5
Typ.
8
Max.
Unit
S
950 1300
150 270
50 70
pF
pF
pF
2/5

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डाउनलोड[ IRF530FP Datasheet.PDF ]


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