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IRF5305S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) - International Rectifier

भाग संख्या IRF5305S
समारोह Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5305S?> डेटा पत्रक पीडीएफ

IRF5305S pdf
IRF5305S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– –––
––– -0.034 –––
––– ––– 0.06
V
V/°C
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA…
VGS = -10V, ID = -16A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
8.0 ––– ––– S VDS = -25V, ID = -16A…
––– ––– -25 µ A VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 63
––– ––– 13
––– ––– 29
––– 14 –––
ID = -16A
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 „…
VDD = -28V
––– 66 ––– ns ID = -16A
––– 39 –––
RG = 6.8
––– 63 –––
RD = 1.6Ω, See Fig. 10 „…
–––
7.5 –––
nH
Between lead,
and center of die contact
––– 1200 –––
VGS = 0V
––– 520 ––– pF VDS = -25V
––– 250 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -31 A showing the
integral reverse
––– ––– -110
p-n junction diode.
G
D
S
––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V „
––– 71 110 ns TJ = 25°C, IF = -16A
––– 170 250 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ VDD = -25V, Starting TJ = 25°C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
… Uses IRF5305 data and test conditions
ƒ ISD -16A, di/dt -280A/µs, VDD V(BR)DSS,
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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