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IRF5305 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) - International Rectifier

भाग संख्या IRF5305
समारोह Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5305?> डेटा पत्रक पीडीएफ

IRF5305 pdf
IRF5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-55 ––– –––
––– -0.034 –––
––– ––– 0.06
-2.0 ––– -4.0
8.0 ––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 13
––– ––– 29
––– 14 –––
––– 66 –––
––– 39 –––
––– 63 –––
––– 4.5 –––
––– 7.5 –––
––– 1200 –––
––– 520 –––
––– 250 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A „
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -16A
VDS = -44V
VGS = -10V, See Fig. 6 and 13 „
VDD = -28V
ID = -16A
RG = 6.8
RD = 1.6Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
71
170
Max.
-31
-110
-1.3
110
250
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -16A, VGS = 0V „
TJ = 25°C, IF = -16A
di/dt = -100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
ƒ ISD -16A, di/dt -280A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
2 www.irf.com

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