DataSheet.in

IRF530 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFETs - Fairchild Semiconductor

भाग संख्या IRF530
समारोह N-Channel Power MOSFETs
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF530?> डेटा पत्रक पीडीएफ

IRF530 pdf
IRF530
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 100oC . . . . . . . . .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF530
100
100
14
10
56
±20
79
0.53
69
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
VGS = ±20V
ID = 8.3A, VGS = 10V (Figures 8, 9)
VDS 50V, ID = 8.3A (Figure 12)
VDD = 50V, ID 14A, RG 12, RL = 3.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
Measured from the
Contact Screw on Tab To
Center of Die
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
Free Air Operation
MIN
100
2
-
-
14
-
-
5.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
7.6
12
35
25
25
18
4
7
600
250
50
3.5
4.5
7.5
-
-
-
MAX
-
4.0
25
250
-
±500
0.16
-
15
65
70
59
30
-
-
-
-
-
-
-
-
1.9
62.5
-
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
nH
oC/W
oC/W
-
©2002 Fairchild Semiconductor Corporation
2
IRF530 Rev. B1

विन्यास 7 पेज
डाउनलोड[ IRF530 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF530N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
IRF530N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTORMotorola  Inc
Motorola Inc


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English