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F0118G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GaAs Infrared Emitting Diode - OSRAM

भाग संख्या F0118G
समारोह GaAs Infrared Emitting Diode
मैन्युफैक्चरर्स OSRAM 
लोगो OSRAM लोगो 
पूर्व दर्शन
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<?=F0118G?> डेटा पत्रक पीडीएफ

F0118G pdf
F 0118G
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value2)
Einheit
Unit
min. typ.
max.
Emissionswellenlänge
Peak wavelength
IF = 10 mA
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50
Sperrspannung
Reverse voltage
IR = 1µA
Durchlaβspannung
Forward voltage
IF = 100 mA
Strahlungsleistung
Radiant Power3)
IF = 100 mA
Photostrom (Spezifikationsparameter Helligkeit)
Photocurrent (specified parameter brightness)
IF = 100 mA
λpeak
∆λ
tr, tf
VR
VF
Φe
Ie
950
55
0.5/0.4
5
1.4 1.6
12
0.65
nm
nm
µs
V
V
mW
a.u.
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per
2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample
fails in that measurement, an area of 0,5 cm² around each failed sample is marked by pen. All el. values are referenced
to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
2003-04-10
2

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