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JANTX2N6802 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A) - International Rectifier

भाग संख्या JANTX2N6802
समारोह POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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JANTX2N6802, JANTXV2N6802 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
2.0
1.5
19.8
2.2
5.5
Typ. Max. Units
——
V
0.43 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.15
— 1.725
— 4.0 V
— — S( )
VGS = 10V, ID = 1.5A 
VGS = 10V, ID = 2.5A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 1.5A 
— 25
— 250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100 nA
— -100
VGS = 20V
VGS = -20V
— 29.5
— 4.6 nC
VGS = 10V, ID = 2.5A
VDS = Max. Rating x 0.5
— 19.7
see figures 6 and 13
— 30
30
55
ns
VDD = 250V, ID = 2.5A,
RG = 7.5, VGS = 10V
— 30
see figure 10
5.0 —
15 —
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
610 —
135 —
65 —
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 2.5 A Modified MOSFET symbol showing the
— — 11
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — 1.4 V
— — 900 ns
— — 7.0 µC
Tj = 25°C, IS = 2.5A, VGS = 0V 
Tj = 25°C, IF = 2.5A, di/dt 100A/µs
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 5.0
— — 175 K/W
Test Conditions
Typical socket mount
To Order

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