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IXBT16N170A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor - IXYS Corporation

भाग संख्या IXBT16N170A
समारोह High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXBT16N170A?> डेटा पत्रक पीडीएफ

IXBT16N170A pdf
IXBH 16N170A
IXBT 16N170A
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
8 12.5
S
1400
90
31
65
13
22
15
25
160
50
1.2
15
28
2.0
220
150
2.6
pF
pF
pF
nC
nC
nC
ns
ns
250 ns
100 ns
2.5 mJ
ns
ns
mJ
ns
ns
mJ
(TO-247)
0.83 K/W
0.25 K/W
TO-247 AD Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = IC90, VGE = 0 V, Pulse test,
t < 300 us, duty cycle d < 2%
IRM IF = IC90, VGE = 0 V, -diF/dt = 50 A/us
t v = 100V
rr R
5.0 V
10 A
360 ns
Notes:
1. Device must be heatsunk for high
temperature leakage current
measurements to avoid thermal
runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %.
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXBT16N170BIMOSFET Monolithic Bipolar MOS TransistorIXYS
IXYS
IXBT16N170AHigh Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS TransistorIXYS Corporation
IXYS Corporation


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