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FDP6690 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor

भाग संख्या FDP6690
समारोह 30V N-Channel PowerTrench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP6690?> डेटा पत्रक पीडीएफ

FDP6690 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 25 V, ID=11A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1mA
ID = 10mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 1mA
ID = 10mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 17 A
VGS=10 V, ID =21 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 23 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V, ID = 21A,
VGS = 5 V
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
140 mJ
11 A
30 V
25 mV/°C
500
100
–100
µA
nA
nA
1 2.2 3
V
–4 mV/°C
12.0 15.5
18.5 23.0
18.0 22.5
m
60 A
33 S
1238
342
104
pF
pF
pF
11 20
9 18
23 37
13 23
11 15
5
4
ns
ns
ns
ns
nC
nC
nC
0.51
0.69
21
25
0.7
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6690S/FDB6690S Rev C (W)

विन्यास 6 पेज
डाउनलोड[ FDP6690 Datasheet.PDF ]


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