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FDP6676S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor

भाग संख्या FDP6676S
समारोह 30V N-Channel PowerTrench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP6676S?> डेटा पत्रक पीडीएफ

FDP6676S pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID=12A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V,
VGS = 16 V,
VGS = –16 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 38 A
VGS = 4.5 V, ID = 35 A
VGS=10 V, ID =38A, TJ=125°C
VGS = 10 V,
VDS = 10 V
VDS = 10 V,
ID = 38 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V,
VGS = 5 V
ID = 38 A,
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
(Note 1)
(Note 1)
trr
Diode Reverse Recovery Time
IF = 3.5 A,
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 2)
Min Typ Max Units
310 mJ
12 A
30 V
25 mV/°C
500
100
–100
µA
nA
nA
1 1.3 3
V
–8.4 mV/°C
4.7 6.5
5.2 8.0
7.3 11
60
145
m
A
S
4853
850
316
pF
pF
pF
14 25
11 20
89 142
31 50
40 56
10
11
ns
ns
ns
ns
nC
nC
nC
0.4
0.5
28.5
57
0.7
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6676S/FDB6676S Rev C (W)

विन्यास 6 पेज
डाउनलोड[ FDP6676S Datasheet.PDF ]


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