DataSheet.in

FDP6670S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor

भाग संख्या FDP6670S
समारोह 30V N-Channel PowerTrench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP6670S?> डेटा पत्रक पीडीएफ

FDP6670S pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V,
ID = 16.5 A
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 1mA
ID = 26mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VDS = VGS, ID = 1mA
ID = 26mA, Referenced to 25°C
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 31 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 31 A,
VGS = 5 V
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
285
16.5
mJ
A
30 V
24 mV/°C
500
100
–100
µA
nA
nA
1 2.2 3
V
–4.5
mV/°C
5 8.5 m
8 12.5
10 19
60
69
A
S
2639
737
222
pF
pF
pF
13 24
10 21
39 62
35 56
23 32
9
8
ns
ns
ns
ns
nC
nC
nC
0.39
0.48
32
56
0.7
0.9
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6670S/FDB6670S Rev E (W)

विन्यास 6 पेज
डाउनलोड[ FDP6670S Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP6670ALN-Channel Logic Level PowerTrenchTM MOSFETFairchild Semiconductor
Fairchild Semiconductor
FDP6670AS30V N-Channel PowerTrench SyncFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English