DataSheet.in

FDP6670AL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level PowerTrenchTM MOSFET - Fairchild Semiconductor

भाग संख्या FDP6670AL
समारोह N-Channel Logic Level PowerTrenchTM MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP6670AL?> डेटा पत्रक पीडीएफ

FDP6670AL pdf
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Conditions
VDD = 15 V, ID = 80 A
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 40 A
TJ = 125°C
VGS = 4.5 V, ID = 37 A
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 40 A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 10 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V
ID = 40 A, VGS = 5 V
IS Maximum Continuous Drain-Source Diode Forward Current (Note 1)
ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 40 A (Note1)
trr Reverse Recovery Time
Irr Reverse Recovery Current
VGS = 0 V, IF = 40 A
dIF/dt = 100 A/µs
Notes
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ Max Unit
300 mJ
80 A
30
22
V
mV/oC
1 µA
100 nA
-100 nA
1 1.5
-5
3V
mV/oC
0.005 0.0065
0.0072 0.0091
0.0067 0.0085
80 A
86 S
3200
820
400
pF
pF
pF
15 27 nS
15 27 nS
85 105 nS
42 68 nS
35 50 nC
9 nC
16 nC
80
240
0.9 1.3
32 55
0.83 5
A
A
V
ns
A
FDP6670AL Rev.C

विन्यास 4 पेज
डाउनलोड[ FDP6670AL Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP6670ALN-Channel Logic Level PowerTrenchTM MOSFETFairchild Semiconductor
Fairchild Semiconductor
FDP6670AS30V N-Channel PowerTrench SyncFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English