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FDP6030BL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP6030BL
समारोह N-Channel Logic Level PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP6030BL?> डेटा पत्रक पीडीएफ

FDP6030BL pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 40 A
IAR Maximum Drain-Source Avalnche Current
150 mJ
40 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
30
23
V
mV/°C
1 µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 1)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
1.6
-4.5
3V
mV/°C
VGS = 10 V, ID = 20 A,
VGS = 10 V, ID = 20 A, TJ = 125°C
0.015 0.018
0.021 0.030
VGS = 4.5 V,ID = 17 A
0.019 0.024
VGS = 10 V, VDS = 10 V
40
VDS = 5 V, ID = 20 A
30
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1160
250
100
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 1)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V,
ID = 20 A, VGS = 5 V
9 17
11 20
23 37
8 16
12 17
3.2
3.7
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current (Note 1)
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 20 A
(Note 1)
Voltage
Note:
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
40
0.95 1.2
A
V
FDP6030BL/FDB6030BL Rev.C

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डाउनलोड[ FDP6030BL Datasheet.PDF ]


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FDP6030BLN-Channel Logic Level PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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