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FDP5690 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel PowerTrenchTM MOSFET - Fairchild Semiconductor

भाग संख्या FDP5690
समारोह 60V N-Channel PowerTrenchTM MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP5690?> डेटा पत्रक पीडीएफ

FDP5690 pdf
Electrical Characteristics
Symbol
Parameter
Tc = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 32A
IAR Maximum Drain-Source Avalanche Current
80 mJ
32 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
60
V
BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 61 mV/°C
TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V
1 µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 1)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 16 A,
VGS = 10 V, ID = 16 A,TJ = 125°C
VGS = 6 V, ID = 15 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 16 A
2 2.4 4
V
-6.4 mV/°C
0.021 0.027
0.042 0.055
0.024 0.032
50
32
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1120
160
80
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 1)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V,
ID = 16 A, VGS = 10 V
10 18
9 18
24 39
10 18
23 33
3.9
6.8
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward
Voltage
Note:
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VGS = 0 V, IS = 16 A
(Note 1)
32
0.92 1.2
A
V
FDP5690/FDB5690 Rev. C

विन्यास 16 पेज
डाउनलोड[ FDP5690 Datasheet.PDF ]


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