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FDP5645 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP5645
समारोह 60V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP5645?> डेटा पत्रक पीडीएफ

FDP5645 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V,
ID = 80 A
800 mJ
IAR Maximum Drain-Source Avalanche
Current
80 A
Off Characteristics
BV DSS
BV DSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 1)
V GS(th)
V GS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 48 V,
VGS = 20 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
60
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 40 A
VGS=10V, ID = 40 A, TJ=125°C
VGS = 6 V,
ID = 38 A
VGS = 10 V, VDS = 10 V
VDS = 5 V,
ID = 40 A
2
60
V
64 mV/°C
1
100
–100
µA
nA
nA
4V
-7.8 mV/°C
8 9.5 m
13 18
9 11
A
88 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30 V,
f = 1.0 MHz
V GS = 0 V,
4468
810
198
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 30 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 30 V,
VGS = 10 V
ID = 80 A,
21 30
13 20
77 90
42 50
76 107
18
21
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
IS Maximum Pulsed Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 40 A
Voltage
80
300
0.9 1.3
A
A
V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP5645/FDB5645 Rev. B (W)

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डाउनलोड[ FDP5645 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP564560V N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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