DataSheet.in

FDP4020P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor - Fairchild Semiconductor

भाग संख्या FDP4020P
समारोह P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP4020P?> डेटा पत्रक पीडीएफ

FDP4020P pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
-20
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-0.4
ID = -250 µA, Referenced to 25°C
VGS = -4.5 V,ID = -8 A,
VGS = -4.5 V,ID = -8 A,TJ=125°C
VGS = -2.5 V,ID = -7 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -8 A
-20
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6
VDS = -5 V,
ID = -16 A, VGS = -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current (Note 2)
ISM
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = -16 A
(Note 2)
Voltage
-28
-0.58
2
0.068
0.098
0.096
14
665
270
70
8
24
50
29
9.5
1.3
2.2
-1
100
-100
-1
0.08
0.13
0.110
16
38
80
45
13
-16
-48
-1.2
V
mV/°C
µA
nA
nA
V
mV/°C
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad
of 2 oz. copper.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDP4020P Rev. A

विन्यास 7 पेज
डाउनलोड[ FDP4020P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP4020PP-Channel 2.5V Specified Enhancement Mode Field Effect TransistorFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English