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FDP2572 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET 150V/ 29A/ 54m - Fairchild Semiconductor

भाग संख्या FDP2572
समारोह N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP2572?> डेटा पत्रक पीडीएफ

FDP2572 pdf
Package Marking and Ordering Information
Device Marking
FDB2572
FDP2572
Device
FDB2572
FDP2572
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 120V
VGS = 0V
TC = 150o
VGS = ±20V
150
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2 - 4V
ID=9A, VGS=10V
- 0.045 0.054
ID = 4A, VGS = 6V,
- 0.050 0.075
ID=9A, VGS=10V, TC=175oC - 0.126 0.146
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V
ID = 9A
Ig = 1.0mA
-
-
-
-
-
-
-
-
1770
183
40
26
3.3
8
5
6
-
-
-
34
4.3
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Resistive Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 75V, ID = 9A
VGS = 10V, RGS = 11.0
tf Fall Time
tOFF
Turn-Off Time
- - 36 ns
- 11 - ns
- 14 - ns
- 31 - ns
- 14 - ns
- - 66 ns
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.2mH, IAS = 19A.
2: Pulse Width = 100s
ISD = 9A
ISD = 4A
ISD = 9A, dISD/dt =100A/µs
ISD = 9A, dISD/dt =100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 74 ns
- 169 nC
©2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B

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डाउनलोड[ FDP2572 Datasheet.PDF ]


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