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FDP20N40 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET - Fairchild Semiconductor

भाग संख्या FDP20N40
समारोह 20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP20N40?> डेटा पत्रक पीडीएफ

FDP20N40 pdf
Package Marking and Ordering Information
Device Marking
FDH20N40
FDP20N40
Device
FDH20N40
FDP20N40
Package
TO-247
TO-220
Reel Size
Tube
Tube
Tape Width
-
-
Quantity
30
50
Electrical Characteristics TC = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max
Statics
BVDSS
Drain to Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
V/°C Reference to 25°C
ID = 1mA
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 400V TC = 25oC
VGS = 0V
TC =150oC
VGS = ±20V
400
-
-
2.0
-
-
-
-
0.43
0.200
3.5
-
-
-
-
-
0.216
4.0
25
250
±100
Dynamics
gfs
Qg(TOT)
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain MillerCharge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V, ID = 10A
VGS = 10V
VDS = 320V
ID = 20A
VDD = 200V
ID = 20A
RG = 10
RD = 15.4
VDS = 25V, VGS = 0V
f = 1MHz
10 -
-
- 35 42
- 10 12
- 12 14.4
- 12.4 -
- 32.5 -
- 30 -
- 34 -
- 1840 -
- 245 -
- 18 -
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Note 2)
IAR Avalanche Current
1100
-
-
-
-
20
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current (Note 1)
(Body Diode)
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
ISD = 20A, dISD/dt = 100A/µs
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 5.5mH, IAS = 20A
-
-
-
-
-
- 20
- 80
0.9 1.2
351 456
4.5 5.85
Units
V
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A

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डाउनलोड[ FDP20N40 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP20N4020A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFETFairchild Semiconductor
Fairchild Semiconductor


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