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FDN5630 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDN5630
समारोह 60V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDN5630?> डेटा पत्रक पीडीएफ

FDN5630 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25 C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(ON)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 48 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1
VGS = 10 V, ID = 1.7 A
VGS = 10 V, ID = 1.7 A, TJ = 125°C
VGS = 6 V, ID = 1.6 A
VGS = 10 V, VDS = 1.7 V
VDS = 10 V, ID = 1.7 A
5
V
63 mV/°C
1
100
-100
µA
nA
nA
2.4 3
V
6.9 mV/°C
0.073 0.100
0.127 0.180
0.083 0.120
6
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
400 pF
102 pF
21 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 20 V, ID = 1.7 A,
VGS = 10 V,
10 20
6 15
15 28
5 15
7 10
1.6
1.2
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
0.42
VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2)
Voltage
0.72 1.2
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design.
A
V
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
b) 270°C/W when
mounted on a minimum
pad.
FDN5630 Rev. C

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डाउनलोड[ FDN5630 Datasheet.PDF ]


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