DataSheet.in

FDM3300NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDM3300NZ
समारोह Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDM3300NZ?> डेटा पत्रक पीडीएफ

FDM3300NZ pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage,
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
Gate Threshold Voltage
TJ Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 10A
VGS = 2.5 V, ID = 9 A
VGS = 4.5 V, ID = 10A, TJ=125°C
VGS = 2.5 V, VDS = 5 V
VDS = 5 V,
ID =10 A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
VDS = 10 V,
VGS = 4.5 V
ID = 10 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2 A
(Note 2)
Voltage
trr Diode Reverse Recovery Time IF = 10 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
20 V
10.7
mV/°C
1 µA
±10 µA
0.6 0.9 1.5
V
–3 mV/°C
16 23
20 28
22 31
10
35
m
A
S
1210
330
180
2.3
pF
pF
pF
10 20
14 25
26 42
13 23
12 17
2
4
2
0.7 1.2
20
6
ns
ns
ns
ns
nC
nC
nC
A
V
nS
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC are guaranteed by design while RθJA is
determined by the user's board design.
(a). RθJA = 52°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDM3300NZ Rev E3 (W)

विन्यास 8 पेज
डाउनलोड[ FDM3300NZ Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDM3300NZMonolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English