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FDI3652 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET 100V/ 61A/ 16m - Fairchild Semiconductor

भाग संख्या FDI3652
समारोह N-Channel PowerTrench MOSFET 100V/ 61A/ 16m
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDI3652?> डेटा पत्रक पीडीएफ

FDI3652 pdf
Package Marking and Ordering Information
Device Marking
FDB3652
FDP3652
FDI3652
Device
FDB3652
FDP3652
FDI3652
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC= 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 61A, VGS = 10V
ID = 30A, VGS = 6V
ID = 61A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 61A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 50V, ID = 61A
VGS = 10V, RGS = 6.8
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.228mH, IAS = 40A.
2: Pulse Width = 100s
ISD = 61A
ISD = 30A
ISD = 61A, dISD/dt = 100A/µs
ISD = 61A, dISD/dt = 100A/µs
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Min Typ Max Units
105 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.014 0.016
- 0.018 0.026
- 0.035 0.043
- 2880 -
pF
- 390 -
pF
- 100 -
pF
41 53 nC
- 5 6.5 nC
- 15 - nC
- 10 - nC
- 10 - nC
- - 146 ns
- 12 - ns
- 85 - ns
- 26 - ns
- 45 - ns
- - 107 ns
-
-
1.25
V
- - 1.0 V
- - 62 ns
- - 45 nC
©2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B

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डाउनलोड[ FDI3652 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDI3652N-Channel PowerTrench MOSFET 100V/ 61A/ 16mFairchild Semiconductor
Fairchild Semiconductor


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