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FDI3632 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET 100V/ 80A/ 9m - Fairchild Semiconductor

भाग संख्या FDI3632
समारोह N-Channel PowerTrench MOSFET 100V/ 80A/ 9m
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDI3632?> डेटा पत्रक पीडीएफ

FDI3632 pdf
Package Marking and Ordering Information
Device Marking
FDB3632
FDP3632
FDI3632
Device
FDB3632
FDP3632
FDI3632
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC= 150oC
VGS = ±20V
100
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2-4
ID=80A, VGS=10V
- 0.0075 0.009
ID =40A, VGS = 6V,
ID=80A, VGS=10V, TC=175oC
-
-
0.009 0.015
0.018 0.022
V
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 80A
Ig = 1.0mA
-
-
-
-
-
-
-
-
6000
820
200
84
11
30
20
20
-
-
-
110
14
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 50V, ID = 80A
VGS = 10V, RGS = 3.6
tf
tOFF
Fall Time
Turn-Off Time
- - 102 ns
- 30 - ns
- 39 - ns
- 96 - ns
- 46 - ns
- - 213 ns
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.12mH, IAS = 75A.
2: Pulse Width = 100s
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt= 100A/µs
ISD = 75A, dISD/dt= 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 64 ns
- 120 nC
©2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1

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डाउनलोड[ FDI3632 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDI3632N-Channel PowerTrench MOSFET 100V/ 80A/ 9mFairchild Semiconductor
Fairchild Semiconductor


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