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FDH50N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDH50N50
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDH50N50?> डेटा पत्रक पीडीएफ

FDH50N50 pdf
Package Marking and Ordering Information
Device Marking
FDH50N50
FDA50N50
Device
FDH50N50
FDA50N50
Package
TO-247
TO-3P
Reel Size
-
-
Tape Width
-
-
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 24A
500
--
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 48A
(Note 4) --
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 400V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
--
--
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 48A
RG = 25
VDS = 400V, ID = 48A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 48A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 48A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.089
20
4979
760
50
161
342
105
360
225
230
105
33
45
--
--
--
580
10
Max Units
--
--
25
250
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.105
--
V
S
6460
1000
65
--
--
pF
pF
pF
pF
pF
220 ns
730 ns
460 ns
470 ns
137 nC
-- nC
-- nC
48 A
192 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 48A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDH50N50 / FDA50N50 Rev. A
2
www.fairchildsemi.com

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डाउनलोड[ FDH50N50 Datasheet.PDF ]


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