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FDH44N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel SMPS Power MOSFET - Fairchild Semiconductor

भाग संख्या FDH44N50
समारोह N-Channel SMPS Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDH44N50?> डेटा पत्रक पीडीएफ

FDH44N50 pdf
Package Marking and Ordering Information
Part Number
FDH44N50
Top Mark
FDH44N50
Package
TO-247
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Statics
BVDSS
BVDSS
/ TJ
rDS(ON)
VGS(th)
Drain to Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
Reference to 25oC,
ID = 1 mA
VGS = 10 V, ID = 22 A
VDS = VGS, ID = 250 µA
VDS = 500 V TC = 25oC
VGS = 0 V
TC = 150oC
VGS = ±20 V
Min.
500
-
-
2
-
-
-
Dynamics
gfs
Qg(TOT)
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50 V, ID = 22 A
VGS = 10 V,
VDS = 400 V,
ID = 44 A
VDD = 250 V,
ID = 44 A,
RG = 2.15 ,
RD = 5.68
VDS = 25V, VGS = 0 V,
f = 1 MHz
11
-
-
-
-
-
-
-
-
-
-
Avalanche Characteristics
EAS Single Pulse Avalanche Energy2
IAR Avalanche Current
1500
-
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
ISD = 44 A
ISD = 44 A, dISD/dt = 100 A/µs
ISD = 44 A, dISD/dt = 100 A/µs
-
-
-
-
-
Notes:
1: Repetitive rating; pulse-width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 1.61 mH, IAS = 44 A
Typ.
-
0.61
0.11
3.15
-
-
-
-
90
24
31
16
84
45
79
5335
645
40
-
-
-
-
0.900
920
14
Max.
-
-
0.12
4
25
250
±100
-
108
29
37
-
-
-
-
-
-
-
-
44
44
176
1.2
1100
18
Unit
V
V/°C
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. C1
2
www.fairchildsemi.com

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