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FDH27N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET - Fairchild Semiconductor

भाग संख्या FDH27N50
समारोह 27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDH27N50?> डेटा पत्रक पीडीएफ

FDH27N50 pdf
Package Marking and Ordering Information
Device Marking
FDH27N50
Device
FDH27N50
Package
TO-247
Reel Size
Tube
Tape Width
-
Quantity
30
Electrical Characteristics Tc = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Statics
BVDSS Drain to Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ID = 250µA, VGS = 0V
Reference to 25oC
ID = 1mA
VGS = 10V, ID = 13.5A
VDS = VGS, ID = 250µA
VDS = 500V TC =25oC
VGS = 0V
TC = 150oC
VGS = ±30V
500
-
-
2.0
-
-
-
Dynamics
gfs
Qg(TOT)
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain MillerCharge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V, ID = 13.5A
VGS = 10V
VDS = 400V
ID = 27A
VDD = 250V
ID = 27A
RG = 4.3
RD = 9.3
VDS = 25V, VGS = 0V
f = 1MHz
11
-
-
-
-
-
-
-
-
-
-
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Note 2)
IAR Avalanche Current
2552
-
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current (Note 1)
(Body Diode)
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
ISD = 27A
ISD = 27A, dISD/dt = 100A/µs
ISD = 27A, dISD/dt = 100A/µs
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 7mH, IAS = 27A
-
-
-
-
-
Typ
-
0.64
0.17
3.3
-
-
-
-
56
17
18
14
54
47
54
3550
409
22
-
-
-
-
0.89
563
9.2
Max
-
-
0.19
4.0
25
250
±100
-
67
20
22
-
-
-
-
-
-
-
-
27
27
108
1.2
714
14
Units
V
V/°C
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
FDH27N50 Rev. A2

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भाग संख्याविवरणविनिर्माण
FDH27N5027A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFETFairchild Semiconductor
Fairchild Semiconductor


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