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FDD6696 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6696
समारोह 30V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6696?> डेटा पत्रक पीडीएफ

FDD6696 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
s
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=13A
165 mJ
IAS Drain-Source Avalanche Current
13 A
Off Characteristics
BV DSS
Drain–Source Breakdown
Voltage
BV DSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
30
23
V
mV/°C
10 µA
IGSSF
Gate–Body Leakage
VGS =± 16 V, VDS = 0 V
± 100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 13 A, TJ=125°C
VDS = 5 V,
ID = 13 A
12
–5
3V
mV/°C
6.7 8.0
8.6 10.7
10.2 15.0
51
m
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1715
410
pF
pF
Crss Reverse Transfer Capacitance
180 pF
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.3
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
VDD = 15 V,
VGS = 10 V,
ID = 13 A,
RGEN = 6
13 23
49
ns
ns
td(off) Turn–Off Delay Time
27 43
ns
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 15V,
VGS = 5 V
ID = 13 A,
17 31
ns
17 24 nC
5 nC
Qgd Gate–Drain Charge
6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
V SD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 13 A (Note 2)
trr Diode Reverse Recovery Time IF = 13 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
13
0.8 1.2
27
15
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on
a 1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size paper
3. Maximum current is calculated as:
current limitation is 21A
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VG S = 10V. Package
FDD6696/FDU6696 Rev. D (W)

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डाउनलोड[ FDD6696 Datasheet.PDF ]


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