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FDD6680A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel/ Logic Level/ PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6680A
समारोह N-Channel/ Logic Level/ PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6680A?> डेटा पत्रक पीडीएफ

FDD6680A pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 56 A
IAR Maximum Drain-Source Avalanche Current
200 mJ
56 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 250 µA
ID =250µA,Referenced to 25°C
30
23
V
mV/°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
1 µA
100 nA
VGS = -20 V, VDS = 0 V
-100 nA
VDS = VGS, ID = 250 µA
ID =250µA,Referenced to 25°C
1
1.5
-4
3V
mV/°C
VGS = 10 V, ID = 14 A
VGS = 10 V,ID =14 A,TJ=125°C
VGS = 4.5 V, ID = 12 A
VGS = 5 V, VDS = 5 V
VDS = 10 V, ID = 14 A
0.008 0.0095
0.012 0.0160
0.010 0.0130
50
41
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2180
500
255
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 14 A,
VGS = 5 V,
13 24
14 26
43 70
15 27
23 33
7
11
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.3
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
0.72 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
A
V
a) RθJA= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6680A, Rev. C

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डाउनलोड[ FDD6680A Datasheet.PDF ]


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