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FDD6680 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6680
समारोह 30V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6680?> डेटा पत्रक पीडीएफ

FDD6680 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID= 12A
IAS Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 12 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 5 V
ID = 12 A,
Min Typ Max Units
180 mJ
12 A
30
24
V
mV/°C
1
±100
µA
nA
1 1.9 3
V
–5 mV/°C
7.7
9.9
11.4
50
47
10
15
16
m
A
S
1230
325
150
1.5
pF
pF
pF
10 19
7 13
29 46
12 21
13 18
3.5
5.1
ns
ns
ns
ns
nC
nC
nC
FDD6680/FDU6680 Rev. C1(W)

विन्यास 6 पेज
डाउनलोड[ FDD6680 Datasheet.PDF ]


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