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FDD6670A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel/ Logic Level/ PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6670A
समारोह N-Channel/ Logic Level/ PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6670A?> डेटा पत्रक पीडीएफ

FDD6670A pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 66 A
IAR Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage
Temperature Coefficient
IDSS Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
400 mJ
66 A
V
25 mV/°C
1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A,TJ=125°C
VGS = 4.5 V, ID =13 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 12 A
1 1.6 3
V
-4 mV/°C
0.0065 0.008
0.0090 0.013
0.0085 0.010
50
55
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
3200
820
400
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 15 A,
VGS = 5 V,
15 27 ns
15 27 ns
85 105 ns
42 68 ns
35 50 nC
9 nC
16 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.3
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
0.72 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
A
V
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted
on a minimum pad .
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6670A, Rev. C

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डाउनलोड[ FDD6670A Datasheet.PDF ]


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