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FDD6612 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel/ Logic Level/ PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6612
समारोह N-Channel/ Logic Level/ PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6612?> डेटा पत्रक पीडीएफ

FDD6612 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A
IAR Drain-Source Avalanche Current
51 mJ
10 A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
25
V
mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1 2.0
–5.1
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VDS = 5 V,
ID = 9.5 A
ID = 8 A
ID = 9.5 A, TJ=125°C
ID = 9.5 A
15
20
23
28
3V
mV/°C
20 m
28
33
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 Mv, f = 1.0 MHz
660 pF
170 pF
90 pF
2.3
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V, ID = 9.5 A,
VGS = 5 V
9 18
5 10
24 38
48
6.7 9.4
2.1
2.7
ns
ns
ns
ns
nC
nC
nC
FDD6612A/FDU6612A Rev. E(W)

विन्यास 6 पेज
डाउनलोड[ FDD6612 Datasheet.PDF ]


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